???????????????????????????????? SSFM1022 ? main product characteristics: v dss 100v r ds (on) 19mohm i d 40a ssft3906 SSFM1022 ssft3906 SSFM1022 ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 1of9 www.silikron.com ? ? features and benefits: to220 ? schematic diagram ? marking and pin assignment ? ? advanced trench mosfet process technology ? special designed for pwm, load switch ing and general pur pose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature description: ? it utilizes the latest frrmos (f ast reverse recovery mos) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications absolute max rating: symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 40 id @ tc = 100c continuous drain current, vgs @ 10v 36 idm pulsed drain current 160 ism pulsed source current (body diode) 160 a pd @tc = 25c power dissipation 3.2 w pd @tc =100c power dissipation 2 w vds drain-source voltage 100 v vgs gate-to-source voltage 25 v eas single pulse avalanche energy @ l=0.1mh 42 mj iar avalanche current @ l=0.1mh 29 a tj tstg operating junction and storage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 16 /w junction-to-ambient (t 10s) 32 /w r ja junction-to-ambient (pcb mounted, steady-state) 60 /w
???????????????????????????????? SSFM1022 ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 2of9 www.silikron.com ? ? electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 100 ? ? v vgs = 0v, id = 250 a rds(on) static drain-to-source on-resistance ? 19 22 m ? vgs = 10v, id = 8a vgs(th) gate threshold voltage 2 ? 4 v vds = vgs, id = 250 a ? ? 10 vds = 100v, vgs = 0v idss drain-to-source leakage current ? ? 50 a vds = 100v, vgs = 0v, tj = 55c gate-to-source forward leakage ? ? ? ? 100 vgs =25v igss gate-to-source reverse leakage -100 ? ? ? na vgs = -25v qg total gate charge ? ? 26.4 35 qgs gate-to-source charge ? ? 9.18 15 ? qgd gate-to-drain("miller") charge ? ? 6.91 10 ? qg(th) gate charge at shreshold ? 5.78 8 nc vplateau gate plateau voltage ? 5.48 8 v vgs=10v, vds=50v, id=8a td(on) turn-on delay time ? ? 10.6 ? ? tr rise time ? ? 3.8 ? ? td(off) turn-off delay time ? ? 16 ? ? tf fall time ? ? 6 ? ? ns vgs=10v, vds=50v, rl=6 ?, rgen=3 ? ciss input capacitance ? ? 1596 ? ? coss output capacitance ? ? 249 ? ? crss reverse transfer capacitance ? ? 77 ? ? pf vgs=0v, vds=50v, f=1mhz r g gate resistance ? 6 ? v gs =0v, v ds =0v, f=1mhz source-drain ratings and characteristics symbol parameter min. typ. max uni ts conditions is maximum body-diode continuous current 40 a vsd diode forward voltage ? 0.65 1 v is=1a, vgs=0v trr reverse recovery time ? 32 ? ns qrr reverse recovery charge ? 48 ? nc if=8a, di/dt=100a/ s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??
???????????????????????????????? SSFM1022 ? ? typical electrical and thermal characteristics ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 3of9 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0 10 20 30 40 50 60 012345 vds,drain to source voltage(v) id,drain current(a) 10v 8v 6v 6.5v 7v 0 10 20 30 40 50 60 0123456 vgs,gate to source voltage(v) id,drain to source current(a) 7 125 25 vds=vgs figure ? 1: ? typical ? output ? characteristics ?????????? figure ? 2: ? typical ? transfer ? characteristics ? ??? 21 22 23 24 25 26 27 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance(normalized) vgs=7v vgs=10v 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 0 25 50 75 100 125 150 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) vgs=10v id=8a vgs=7v id=6.5a ? ? ? ? ? ? ? ? ? figure 3: on-resistance vs. drain current and figure 4: on-resistance vs. junction gate voltage temperature ? figure 5: on-resistance vs. gate-source voltage figure 6: body-diode characteristics 15 20 25 30 35 40 45 6789 1 0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.2 0.4 0.6 0.8 1 1.2 vsd,source to drain voltage(v) is,source to drain current(a) ed) vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normaliz id=8a 125 125 25 25
???????????????????????????????? SSFM1022 ? ?? typical electrical and thermal characteristics ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 4of9 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? ? 0 2 4 6 8 10 0 5 10 15 20 25 30 qg,gate charge(nc) vgs,gate to source voltage(v) vds=50v id=8a 0 500 1000 1500 2000 2500 01 02 03 04 0 vds, drain to source voltage(v) capacitance (pf) 5 0 ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd ? figure 7: gate-charge characteristics figure 8: capacitance characteristics ? ? ? ? ? ? ? ? ? ? ? ? 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=150 tc=25 10s 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) po we r ( w ) tj(max)=150 ta=25 figure 9: maximum forward biased safe figure 10: single pulse power rating operating area( ) junction-to-ambient ( ) ? 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) zjc,transient thermal resistance( n ormalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single duty cycle d=t1/t, tj max pdm*z jc*r jc+tc r jc=16 /w ? ? ? ? ? ? ? ? ? ? ? ? ? figure 11: normalized maximum transient thermal impedance ( )
???????????????????????????????? SSFM1022 ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 5of9 www.silikron.com ? ? 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) zja,transient thermal resistance( n ormalized ) duty cycle d=t1/t, tj max pdm*z ja*r ja+ta r ja=60 /w duty cycle d=0.5,0.3,0.1, 0.05,0.01,single figure 12: normalized maximum transient thermal impedance ( )
???????????????????????????????? SSFM1022 ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 6of9 www.silikron.com ? ? notes: the maximum current rating is limited by bond-wires. repetitive rating; pulse width limit ed by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case t hermal resistance. the value of r ja is measured with the device mount ed on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to -case thermal impedence which is measured with the device mounted to a large h eatsink, assuming a maximum junction temperature of tj(max)=175c.
???????????????????????????????? SSFM1022 ? mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.590 2.690 2.790 0.102 0.106 0.110 b 0.770 - 0.900 0.030 - 0.035 b2 1.230 - 1.360 0.048 - 0.054 c 0.480 0.500 0.520 0.019 0.020 0.020 d 15.100 15.400 15.700 - 0.606 - d1 9.000 9.100 9.200 0.354 0.358 0.362 dep 0.050 0.285 0.520 0.002 0.011 0.020 e 10.060 10.160 10.260 0.396 0.400 0.404 e1 - 8.700 - - 0.343 - p 1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 h1 6.100 6.300 6.500 0.240 0.248 0.256 l 12.750 12.960 13.170 0.502 0.510 0.519 l1 - - 3.950 - - 0.156 l2 p 3.570 3.600 3.630 0.141 0.142 0.143 q 2.730 2.800 2.870 0.107 0.110 0.113 q1 - 0.200 - - 0.008 - ?1 5 0 7 0 9 0 5 0 7 0 9 0 ?2 1 0 3 0 5 0 1 0 3 0 5 0 0.073ref 5.08bsc 0.2bsc symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 1.85ref to220 package ? outline ? dimension ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 7of9 www.silikron.com ? ?
???????????????????????????????? SSFM1022 ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 8of9 www.silikron.com ? ? ordering and marking information device marking: SSFM1022 package (available) to220 operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =150 or 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSFM1022 ? ? silikron semiconductor co.,ltd. 2010.12.14 version : 1.0 preliminary page 9of9 www.silikron.com ? ? attention: any and all silikron products described or cont ained herein do not have specifications that can handle applications that require extremely high leve ls of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. cons ult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failure s that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of t he described products in the independent state, and are not guarantees of the perform ance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent devic e, the customer should always evaluate and test devices mounted in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to suppl y high-quality high-reliabili ty products. however, any and all semiconductor products fail with some pr obability. it is possible that these probabilistic failures could give rise to accidents or events that c ould endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these ki nds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prev ention circuits for safe design, redundant design, and structural design. in the event that any or all silikron produc ts(including technical data, services) described or contained herein are controlled und er any of applicable local export control laws and regulations, such products must not be exported without obtai ning the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written per mission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvemen t, etc. when designi ng equipment, refer to the "delivery specification" for the silikron pr oduct that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building ? 11a ? suchun ? industrial ? square, ? 428# ? xinglong ? street, ? suzhou ? p. r . ? china ? tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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